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| IGBT MODULE CIRCUIT Single 800A 600V OUTLINE DRAWING PHMB800A6 Dimension(mm) MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 650g Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR M4 PHMB800A6 600 +/ - 20 800 1600 2700 -40 to +150 -40 to +125 2500 3 1.4 10 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals M8 Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=800A,VGE=15V VCE=5V,IC=800mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.375 ohm RG= 0.6 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 80,000 0.25 0.45 0.2 0.6 Max. 8.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 800 1800 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=800A,VGE=0V IF=800A,VGE=-10V,di/dt=800A/s Min. - Max. 2.4 0.25 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.045 0.11 PHMB800A6 Fig.1- Output Characteristics (Typical) 1600 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 IC=320A 1600A VGE=20V 12V Collector to Emitter Voltage V CE (V) 15V 10V 14 800A 12 10 8 6 4 2 0 Collector Current I C (A) 1200 800 9V 400 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 IC=320A 1600A Collector to Emitter Voltage V CE (V) 800A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=0.375 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=300V 150 6 200V 100 50 0 0 600 1200 1800 2400 3000 100V 4 2 0 3600 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 500000 200000 100000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Cies Coes Cres VGE=0V f=1MHZ TC=25 VCC=300V RG=0.6 VGE=15V TC=25 Switching Time t (s) Capacitance C (pF) 50000 20000 10000 5000 2000 1000 500 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 200 400 600 800 toff ton tr tf Collector to Emitter Voltage VCE (V) Collector Current IC (A) PHMB800A6 Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) 1600 2 VCC=300V IC=800A VG=15V TC=25 TC=25 1400 1200 TC=125 Switching Time t (s) Forward Current I F (A) 1 1000 800 600 400 200 0 toff 0.5 ton tr 0.2 tf 0.1 0.5 1 2 5 10 20 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 1000 500 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=800A TC=25 trr RG=0.6 VGE=15V TC125 200 Collector Current I C (A) 2000 3000 4000 5000 200 100 50 20 10 5 2 1 0.5 0.2 100 50 IRrM 20 10 5 0 1000 0.1 0 200 400 600 800 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 2x10 -1 FRD (/W) 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 7x10 -4 5x10 -4 2x10 -4 IGBT Transient Thermal Impedance Rth (J-C) TC=25 1 Shot Pulse 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) |
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